Breakthrough in UV Detection Technology with Silicon-Zinc Oxide Bilayer Design
Scientists have created a novel ultraviolet photodetector using a p-Si/n-ZnO bilayer structure that demonstrates superior performance characteristics. The device achieves responsivity of 9 A/W and significantly improved response times compared to conventional designs, marking a substantial advancement in UV detection technology.
Advanced UV Photodetector Demonstrates Enhanced Performance
Researchers have developed a novel ultraviolet photodetector using a p-Si/n-ZnO bilayer structure that reportedly achieves significant improvements in both responsivity and response time, according to recent scientific reports. The device, fabricated through magnetron sputtering deposition, demonstrates enhanced photoresponse characteristics that could advance various optoelectronic applications requiring precise UV detection.