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Researchers demonstrate that strain engineering significantly enhances quantum defect performance, achieving over 60% spin readout contrast at room temperature. This breakthrough enables more reliable quantum sensors and computing systems. The findings combine theoretical frameworks with experimental validation in silicon carbide.
Strain engineering has emerged as a powerful method to control quantum defects in solid crystal lattices, significantly enhancing performance for quantum technologies. Researchers have demonstrated that applying specific strain fields can boost spin readout contrast by over 60% at room temperature, enabling more reliable quantum sensors, computers, and communication systems. This breakthrough addresses the longstanding challenge of achieving consistent performance in quantum systems operating under ambient conditions.
